MUBW40-12T7【PDF 2/4 页】MODULE IGBT CBI E2

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MUBW 40-12 T7

Output Inverter T1 - T6

Equivalent Circuits for Simulation

Symbol

Conditions

Maximum Ratings

Conduction

V CES

V GES

I C25

T VJ = 25°C to 150°C

Continuous

T C = 25°C

1200

± 20

62

V

V

A

I C80

I CM

V CEK

t SC

(SCSOA)

P tot

T C = 80°C

RBSOA; V GE = ± 15 V; R G = 27 Ω ; T VJ = 125°C

Clamped inductive load; L = 100 μH

V CE = 900 V; V GE = ± 15 V; R G = 27 Ω ; T VJ = 125°C

non-repetitive

T C = 25°C

44

100

V CES

10

220

A

A

μs

W

D11 - D16

Rectifier Diode (typ. at T J = 125°C)

V 0 = 0.83 V; R 0 = 11 m Ω

T1 - T6 / D1 - D6

IGBT (typ. at V GE = 15 V; T J = 125°C)

V 0 = tbd; R 0 = tbd

Symbol

Conditions

Characteristic Values

(T VJ = 25 ° C, unless otherwise specified)

Free Wheeling Diode (typ. at T J = 125°C)

V 0 = 1.26V; R 0 = 15 m Ω

T7 / D7

V CE(sat)

I C = 40 A; V GE = 15 V; T VJ = 25°C

min. typ. max.

2.0 2.6

V

IGBT (typ. at V GE = 15 V; T J = 125°C)

V 0 = 1.37 V; R 0 = 62 m Ω

V GE(th)

I C = 1.5 mA; V GE = V CE

T VJ = 125°C

5

2.4

6.5

V

V

Free Wheeling Diode (typ. at T J = 125°C)

V 0 = 1.39 V; R 0 = 56 m Ω

I CES

V CE = V CES ; V GE = 0 V; T VJ = 25°C

1.75

mA

I GES

T VJ = 125°C

V CE = 0 V; V GE = ± 20 V

3

400

mA

nA

Thermal Response

t d(on)

90

ns

t r

t d(off)

t f

E on

E off

Inductive load, T VJ = 125°C

V CE = 600 V; I C = 40 A

V GE = ±15 V; R G = 27 Ω

50

520

90

4

4.7

ns

ns

ns

mJ

mJ

C ies

Q Gon

R thJC

V CE = 25 V; V GE = 0 V; f = 1 MHz

V CE = 600V; V GE = 15 V; I C = 35 A

(per IGBT)

2.5

330

nF

nC

0.6 K/W

D11 - D16

Rectifier Diode (typ.)

C th1 = 0.106 J/K; R th1 = 1.06 K/W

C th2 = 0.79 J/K; R th2 = 0.239 K/W

T1 - T6 / D1 - D6

Output Inverter D1 - D6

IGBT (typ.)

C th1 = tbd; R th1 = tbd

Symbol

Conditions

Maximum Ratings

C th2 = tbd; R th2 = tbd

I F25

I F80

T C = 25°C

T C = 80°C

50

33

A

A

Free Wheeling Diode (typ.)

C th1 = 0.116 J/K; R th1 = 0.973 K/W

C th2 = 0.879 J/K; R th2 = 0.217 K/W

Symbol

Conditions

Characteristic Values

min. typ. max.

T7 / D7

IGBT (typ.)

C th1 = 0.156 J/K; R th1 = 0.545 K/W

V F

I F = 40 A; V GE = 0 V; T VJ = 25°C

3.0

V

C th2 = 1.162 J/K; R th2 = 0.155 K/W

T VJ = 125°C

1.9

2.2

V

Free Wheeling Diode (typ.)

I RM

t rr

E rec(off)

R thJC

I F = 30 A; di F /dt = -1100 A/μs; T VJ = 125°C

V R = 600 V; V GE = 0 V

(per diode)

51

180

1.8

A

ns

mJ

1.19 K/W

C th1 = 0.043 J/K; R th1 = 2.738 K/W

C th2 = 0.54 J/K; R th2 = 0.462 K/W

20070912a

? 2007 IXYS All rights reserved

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